Navitas Files Second Patent Lawsuit Against Renesas Over GaN Chips

Navitas Semiconductor (NVTS) filed a second patent infringement lawsuit against Renesas Electronics in the U.S. District Court for the Eastern District of Texas on Thursday, charging six counts over gallium nitride (GaN) power transistors, according to a company press release reported by Semiconductor Today and Investing.com.

The suit targets Renesas' TP65H020G4PLSGBD 650V SuperGaN GaN FET, announced September 30, 2026, alleging it infringes four Navitas patents (U.S. Patent Nos. 9,929,079; 11,545,838; 11,770,010; and 11,862,996), and Renesas' REXGaN family of 100V enhancement-mode GaN transistors, introduced October 6, 2026, alleging two patent counts (U.S. Patent Nos. 9,613,891 and 10,269,687).

Navitas filed its first suit against Renesas on August 10, 2026, alleging SuperGaN products infringed its GaN patents. Both cases remain pending. Navitas said ongoing litigation did not deter Renesas from further alleged infringement.

Siddarth Sundaresan, Navitas senior vice president and CTO, called the company an early GaN innovator that pioneered bringing GaN technology to scale, and said competitors flagrantly disregarding its intellectual property rights will not go unanswered.

Navitas said it holds more than 450 patents issued or pending and was founded in 2014, developing GaN, silicon carbide and integrated voltage regulator technologies. Renesas is a Tokyo-based company.

NVTS shares were down 5.4% in delayed trading at $9.04.

The TP65H020G4PLSGBD is a 650V, 20 milliohm (typical) device in a dual-side-cooled PQFN 8x8 package targeting 800V data-center DC-DC converters, Navitas said, following its own 800V-to-6V power delivery board announced at NVIDIA GTC in March 2026.

What remains unclear is the outcome of either case and whether the parties will settle.