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Tech & AI1 min read

Micron Begins Customer Sampling of High-Bandwidth Memory HBM4 for Next-Gen AI Clusters

Micron began sampling HBM4 chips offering 1.8 TB/s bandwidth and 30% lower power consumption, with capacity sold out through 2027.

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Next-Generation Memory Architecture

Micron Technology initiated customer sampling of its HBM4 (High Bandwidth Memory 4) chips for major AI accelerator design partners. Built with advanced 1-gamma (1γ) EUV lithography and a custom 2048-bit wide base die, the new memory modules achieve bandwidth in excess of 1.8 TB/s per stack.

Power Efficiency Breakthroughs

Micron noted that HBM4 delivers an estimated 30% reduction in power consumption per bit compared to existing HBM3E products. The energy efficiency gains are critical for hyperscale operators facing power envelope constraints in gigawatt-scale data center installations.

Capacity Sold Out Through 2027

Management affirmed that Micron's entire HBM production allocation for calendar years 2026 and 2027 remains fully committed under binding customer agreements. The tight supply environment supports robust average selling prices (ASPs) and sustained gross margin expansion.