Micron Begins Customer Sampling of High-Bandwidth Memory HBM4 for Next-Gen AI Clusters
Micron began sampling HBM4 chips offering 1.8 TB/s bandwidth and 30% lower power consumption, with capacity sold out through 2027.
Next-Generation Memory Architecture
Micron Technology initiated customer sampling of its HBM4 (High Bandwidth Memory 4) chips for major AI accelerator design partners. Built with advanced 1-gamma (1γ) EUV lithography and a custom 2048-bit wide base die, the new memory modules achieve bandwidth in excess of 1.8 TB/s per stack.
Power Efficiency Breakthroughs
Micron noted that HBM4 delivers an estimated 30% reduction in power consumption per bit compared to existing HBM3E products. The energy efficiency gains are critical for hyperscale operators facing power envelope constraints in gigawatt-scale data center installations.
Capacity Sold Out Through 2027
Management affirmed